www. sem icoa .com 2n2060 silicon npn transisto r data sheet description ? screening and processing per mil-prf-19500 appendi x e ? jan level (2n2060j) ? jantx level (2N2060JX) ? jantxv level (2n2060jv) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 m e thod 2072 for jantxv ? radiation testing (total dose) upon request please contact sem i coa for speci al confi gurat i ons www. semicoa .com or (714) 979-1900 applications ? m a t c hed, dual transi st ors ? low power ? npn silico n tran sisto r features ? herm etically sealed to-77 m e tal can ? al so avai l a bl e i n chi p confi gurat i on ? c h i p geom et ry 0410 ? r e ference docum ent : m i l-pr f-19500/ 270 benefits ? qu alificatio n lev e ls: jan, jantx, an d jantxv ? r a di at i on t e st i ng avai l a bl e absolute maximum ratings t c = 2 5 c u n l ess o t h e rw ise sp ecified parameter sy mbol rating unit co llecto r-em itter vo ltag e v ceo 60 vol t s collector-base voltage v cbo 100 vol t s em itter-base vo ltag e v ebo 7 vo lts c o l l ect or c u rrent , c ont i nuous i c 500 m a power di ssi pat i on, t a = 25 c derat e l i n earl y above 25 c p t 540 one sect i on 600 bot h sect i ons 3.08 one sect i on 3.48 bot h sect i ons mw mw mw / c mw / c power di ssi pat i on, t c = 25 c derat e l i n earl y above 25 c p t 1.5 one sect i on 2.12 bot h sect i ons 8.6 one sect i on 12.1 bot h sect i ons w w mw / c mw / c operat i ng junct i on tem p erat ure storage tem p erature t j t stg -65 t o +200 c copy right ? 20 10 rev. h 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 1 sem i coa corporation offers: semicoa corporation .
www. sem icoa .com 2n2060 silicon npn transisto r data sheet electrical characteristics characteristics specified at t a = 2 5 c off characteristics parameter sy mbol test conditions min ty p max units collector-em itter breakdown voltage v (br)ceo i c = 30 m a 60 vo lts collector-em itter breakdown voltage v (br)cer i c = 10 m a , r be = 10 ? 80 vo lts collector-base cutoff current i cbo1 i cbo2 i cbo3 v cb = 100 vol t s v cb = 80 vol t s v cb = 80 vol t s , t a = 150 c 10 2 10 a na a co llecto r-em itter cu to ff cu rren t i ceo v ce = xx vol t s a co llecto r-em itter cu to ff cu rren t i cex v ce = xx vol t s , v eb = x vo lts a co llecto r-em itter cu to ff cu rren t i ces v ce = xx vol t s na em itter-base cu to ff cu rren t i ebo1 i ebo2 v eb = 7 vo lts v eb = 5 vo lts 10 2 a na on characteristics pulse test: pulse width = 300 s, duty cy cle 2.0% parameter sy mbol test conditions min ty p max units dc current gain h fe1 h fe2 h fe3 h fe4 h fe5 i c = 10 a, v ce = 5 vo lts i c = 100 a, v ce = 5 vo lts i c = 1 m a , v ce = 5 vo lts i c = 10 m a , v ce = 5 vo lts i c = 100 a, v ce = 5 vo lts t a = -55 c 25 30 40 50 10 75 90 120 150 base-em itter vo ltag e differen tial |v be1 - v be2 | 1 |v be1 - v be2 | 2 v ce = 5 vo lts, i c = 100 a v ce = 5 vo lts, i c = 1 m a 5 m v ol t s base-em itter vo ltag e differen tial change with tem p erature |v be1 - v be2 | 1 |v be1 - v be2 | 2 v ce = 5 vo lts, i c = 100 a t a = 25 c and -55 c v ce = 5 vo lts, i c = 1 m a t a = 25 c and +125 c .8 1 m v o lts copy right ? 200 10 rev. h 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 semicoa corporation
www. sem icoa .com 2n2060 silicon npn transisto r data sheet dy namic characteristics parameter sy mbol test conditions min ty p max units mag n itu d e ? co m m o n em itter, sh o r t circuit forward curre nt transfer ratio |h fe | v ce = 10 vol t s , i c = 50 m a , f = 20 m h z 3 25 sm all sig n a l sh o r t circu it fo rward current transfer ratio h fe v ce = 5 vo lts, i c = 1 m a , f = 1 khz 50 150 op en circu it ou tp u t cap acitan ce c obo v cb = 10 vol t s , i e = 0 m a , 100 khz < f < 1 m h z 15 pf open c i rcui t input c a paci t a nce c ibo v eb = 0.5 vol t s , i c = 0 m a , 100 khz < f < 1 m h z 85 pf noise figure nf 1 nf 2 v ce = 10 vol t s , i c = 300 a, f = 1 khz, r g = 510 ? v ce = 10 vol t s , i c = 300 a, f = 10 khz, r g = 1 k ? 8 8 db short c i rcui t input im pedance h ib v cb = 5v, i c = 1m a, f = 1khz 20 30 ? short c i rcui t input im pedance h ie v cb = 5v, i c = 1m a, f = 1khz 1 4 k ? op en circu it ou tp u t ad m ittan ce h oe v cb = 5v, i c = 1m a, f = 1khz 16 m hos copy right ? 200 10 rev. h 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 3 of 3 semicoa corporation
|
